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On the silicon nitride film formation from N/sub 2/-SiH/sub 4/ electron cyclotron resonance plasma

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4 Author(s)
Kim, Yong‐Jin ; Dept. of Phys., KAIST, Yusong-gu, Taejon, Korea ; Kim, Jung-Hyung ; Sun-Kyu Song ; Hong-Young Chang

Summary form only given, as follows. Silicon nitride (SiN/sub x/) thin film was deposited onto a 3-inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH/sub 4N/sub 2/ gas flow rate ratio at 1.5 m Torr without substrate heating were analyzed using X-ray photoelectron spectroscopy and ellipsometer measurements. Silicon nitride thin films prepared by the ECR plasma chemical vapor deposition method at low substrate temperature (<100/spl deg/C) exhibited excellent physical and electrical properties. Very uniform and good-quality silicon nitride thin films were obtained.

Published in:

Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on

Date of Conference:

7-9 June 1993