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Summary form only given, as follows. Silicon nitride (SiN/sub x/) thin film was deposited onto a 3-inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH/sub 4N/sub 2/ gas flow rate ratio at 1.5 m Torr without substrate heating were analyzed using X-ray photoelectron spectroscopy and ellipsometer measurements. Silicon nitride thin films prepared by the ECR plasma chemical vapor deposition method at low substrate temperature (<100/spl deg/C) exhibited excellent physical and electrical properties. Very uniform and good-quality silicon nitride thin films were obtained.