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Accurate Model for the Threshold Voltage Fluctuation Estimation in 45-nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants

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4 Author(s)
Ashraf, N. ; Arizona State Univ., Tempe, AZ, USA ; Vasileska, D. ; Wirth, G. ; Srinivasan, P.

A physical-based analytical model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50-nm MOSFET is of utmost significance. In this letter, simulation results from two different analytical models and particle-based device ensemble Monte Carlo schemes are used to compute threshold voltage variation in the presence of interface traps at a certain location in the channel. These results provide clear evidence that, without the accurate short-range Coulomb force correction, the analytical models will provide inconsistent VT for traps located near the source of the MOSFET device with 32-nm effective channel length.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 8 )

Date of Publication:

Aug. 2011

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