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SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

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5 Author(s)
Baile Chen ; Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA ; Weiyang Jiang ; Jinrong Yuan ; Holmes, Archie L.
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This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that photodiodes with strain-compensated and lattice-matched absorption regions have optical response out to 3.4 and 2.8 μm with dark current densities of 9.7 and 1.66 mA cm-2,respectively, at 290 K under -0.5 V reverse bias. The carrier transport mechanism responsible for the difference in responsivity and detectivity between strain-compensated and lattice-matched InGaAs/GaAsSb MQWs is discussed.

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Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 9 )