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0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations

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3 Author(s)
Sayginer, M. ; Elektron. ve Haberlesme Muhendisligi Bolumu, Istanbul Teknik Univ., Maslak, Turkey ; Yazgi, M. ; Kuntman, H.

In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >;45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.

Published in:

Signal Processing and Communications Applications (SIU), 2011 IEEE 19th Conference on

Date of Conference:

20-22 April 2011