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Microphotoluminescence studies were carried out on a single GaN nanocolumn containing a single InGaN quantum disk (QDisk) that had been removed from its growth substrate and dispersed onto a patterned grid. An analysis of the dynamics of the carriers in the nanocolumn is presented. Suppression of the GaN luminescence from the area of the column in the vicinity of the InGaN QDisk in addition to a delayed emission from the QDisk relative to the GaN is observed. Time resolved spatial maps of the luminescence intensity from the column are also presented, illustrating the evolution of the carrier density in the system.