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A Magnetic Flower State-Based Memory Cell

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3 Author(s)
Wang, N. ; Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China ; Wang, X.L. ; Ruotolo, A.

In an elliptical magnetic dot two vortices and a flower state configuration can be accommodated at remanence. We show that a two-fold degeneracy in the position of the flower state can be geometrically introduced and exploited for solid state data storage. Switching between two, energetically-equivalent, magnetic configurations is obtained by injecting a perpendicular electric current. Switching currents of the order of ~105 A/cm2 and high thermal stability are demonstrated by micromagnetic simulations. This system can be used as a bit-cell for magnetic solid state data storage. The low value of the switching current and the high thermal stability allow direct integration with the current complementary metal oxide semiconductor technology.

Published in:

Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 7 )

Date of Publication:

July 2011

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