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A Magnetic Flower State-Based Memory Cell

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3 Author(s)
Wang, N. ; Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China ; Wang, X.L. ; Ruotolo, A.

In an elliptical magnetic dot two vortices and a flower state configuration can be accommodated at remanence. We show that a two-fold degeneracy in the position of the flower state can be geometrically introduced and exploited for solid state data storage. Switching between two, energetically-equivalent, magnetic configurations is obtained by injecting a perpendicular electric current. Switching currents of the order of ~105 A/cm2 and high thermal stability are demonstrated by micromagnetic simulations. This system can be used as a bit-cell for magnetic solid state data storage. The low value of the switching current and the high thermal stability allow direct integration with the current complementary metal oxide semiconductor technology.

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Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 7 )