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The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd2O3 gate dielectrics were investigated. The threshold voltage Vth can be adjusted from -0.8 to - 0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the Vth shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.