Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd
₂
O
₃
gate dielectrics were investigated. The threshold voltage
V
_th
can be adjusted from -0.8 to - 0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the
V
_th
shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.