For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures Tcap between 300°C and 700°C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of Tcap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At Tcap = 300°C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500°C the WL becomes heavily alloyed during capping, and at 700°C the islands also become alloyed. At Tcap = 500°C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at Tcap = 700°C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≈6 ML, we found an unexpected thickening of the WL, almost independently of Tcap. This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.