By Topic

A high energy X-ray computed tomography using silicon semiconductor detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
H. Miyai ; Res. Lab., Hitachi Ltd., Japan ; K. Satou ; H. Kitaguchi ; S. Izumi

Second- and third-generation high energy industrial X-ray computed tomography systems using silicon semiconductor detectors were developed. Both systems consist of a high energy X-ray source using an electron linear accelerator with the maximum energy of 6 MeV and an array detector unit using silicon semiconductor detectors. This unit also includes a collimator with slits 0.2 mm wide and 1.4 mm high, located in front of the detectors. To increase sensitivity, detector elements were placed parallel to the X-ray beams, The third-generation system had 512 detector elements arrayed with 1.3 mm pitch. To reduce detector pitch, each detector chip was mounted on a tungsten base plate using a thin film circuit board. The plate acts as shield to absorb incoming scattered X-rays and secondary electrons generated at neighbor detectors. Performance tests were carried out in the second- and third-generation systems. The spatial resolution of 0.30 mm was confirmed for an iron test piece of 70 mm diameter using the second-generation system. The scans for a slice were completed within less than 10 seconds in the third-generation system

Published in:

Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE  (Volume:2 )

Date of Conference:

2-9 Nov 1996