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Collector-up InGaP/GaAs-double heterojunction bipolar transistors with high fmax

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6 Author(s)
Henkel, A. ; Lab. Central de Recherches, Thomson-CSF, Orsay ; Delage, S.L. ; diForte-Poisson, M.-A. ; Chartier, E.
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The first fabrication and RF characterisation of an InGaP/GaAs double heterojunction bipolar transistor in collector-up configuration is reported. Boron implantation is used to avoid electron injection into the extrinsic base regions. The InGaP collector offers fmax=115 GHz and a high breakdown voltage (BVceo=27V)

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Electronics Letters  (Volume:33 ,  Issue: 7 )