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Resistive-fuse network for early vision using resonant tunnelling diodes and HEMTs on an InP substrate

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2 Author(s)
K. Maezawa ; NTT Syst. Electron. Labs., Atsugi, Japan ; M. Yamamoto

A new resonant tunnelling resistive-fuse circuit featuring symmetric and flat-valley I-V curve is proposed for image processing. The network for early vision was fabricated using an InP-based resonant tunnelling diode/HEMT integration technology. The fabricated network demonstrates the effectiveness of the proposed resistive-fuse for image restoration

Published in:

Electronics Letters  (Volume:33 ,  Issue: 8 )