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A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load

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6 Author(s)
Man Ju Seok ; Kyung Hee University, Seoul, Korea ; Min Hyuk Choi ; Mallory Mativenga ; Di Geng
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A high-performance inverter implemented with single-gated driving and dual-gated load amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) is demonstrated. The threshold voltage of the load TFT shifts to the negative gate voltage direction when a constant positive bias is applied on the top gate while sweeping the bottom gate. Using a positive top gate bias, the load TFT can be operated in the depletion mode to realize inverters with excellent switching characteristics, such as a wider swing range and a higher noise margin.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 8 )