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Direct extraction of base-collector model parameters for AlGaAs/GaAs HBT equivalent circuit

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1 Author(s)
Seonghearn Lee ; Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea

A new and direct extraction technique based on analytical equations of Z-parameters is used to determine all parameters in the base contact impedance and distributed base model of the AlGaAs/GaAs HBT, without numerical optimisation processing. This technique yields good agreement between HBT equivalent circuit and measured S-parameters, verifying the accuracy of the extraction

Published in:

Electronics Letters  (Volume:33 ,  Issue: 9 )