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Interconnections such as Through Silicon Via (TSV) and Redistribution Layer (RDL) constitute one of key components to acquire high performance in 3D integrated circuits. These interconnections deal with an unusual environment as they are embedded in silicon substrates which could modify largely their propagation properties. In addition architectures of TSV and BRDL are complex in terms of design and stack of materials. Thus, it is essential to characterize them in high frequency in order to analyze, predict and optimize their performance. In this paper, we present results of TSV and BRDL electrical models extractions up to 20 GHz obtained by taking advantage of an innovative de-embedding method using silicon photoconductive properties.