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High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS

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5 Author(s)
I. Iramnaaz ; Department of electrical engineering, Wright State University, 3640 Colonel Glenn Hwy., Dayton, OH 45435, USA ; T. Sandoval ; Y. Zhuang ; H. Schellevis
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Integrated on-chip inductors with high quality factors are demonstrated using a low loss artificial conductor technology. This concept is based on an artificial layered meta-material comprising a bi-layered Ni80Fe20/Cu superlattice. By properly tailoring the thickness ratio between the non-magnetic and magnetic metallic layers, the skin effects can be effectively suppressed within a wide frequency range, and can be tuned to a minimum at the frequency of interest up to 67 GHz. The quality factor has been increased by 41% of a 2nH inductor at 14.5GHz. The bandwidth of skin effect suppression is obtained between 10-18 GHz.

Published in:

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

Date of Conference:

May 31 2011-June 3 2011