Cart (Loading....) | Create Account
Close category search window
 

A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Liu, J.Y.-C. ; Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA ; Gu, Q.J. ; Tang, A. ; Ning-Yi Wang
more authors

A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm2. It achieves a minimal Psat-P1dB separation of 0.6 dB by extending the P1dB by 8.5 dB. To our best knowledge, this is the smallest Psat-P1dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 7 )

Date of Publication:

July 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.