Subthreshold Characteristics of MOS Transistors With $ \hbox{CeO}_{2}/\hbox{La}_{2}\hbox{O}_{3}$ Stacked Gate Dielectric

This letter reports the subthreshold characteristics of MOS transistors with the novel CeO
₂
/La
₂
O
₃
stacked gate dielectric. We found that the top CeO
₂
capping layer does not only improve the bulk properties of La
₂
O
₃
by reducing the oxygen vacancies as a result of the reduction reaction of CeO
₂
but also reduces the La
₂
O
₃
/Si interface trap pronouncedly. We further identify the energy level of the interface traps by conducting temperature-dependent subthreshold slope measurements.