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Mechanical properties of Si-C-O-H low-k dielectrics prepared by plasma enhanced chemical vapor deposition

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4 Author(s)
Woytowitz, P. ; Comput. Modeling, Novellus Syst., Inc., San Jose, CA, USA ; Roham, S. ; Dong Niu ; Haiying Fu

Mechanical properties of low dielectric constant (low-k) materials are one of the key areas that need to be better understood in order to improve copper/low-k dual damascene integration. In this paper, mechanical properties of carbon doped oxide (CDO) films deposited using TMCTS and CO2 as precursors are reported. Differences in Young's modulus, residual stress and fracture toughness for films prepared by two processes A and B have been observed and are correlated to carbon contents using Fourier transform infrared spectroscopy (FTIR). For similar carbon content, process B films show higher modulus and toughness and lower stress than process A films. Fracture toughness calculated from critical thickness measurement indicates bimodal behaviors for process B films. Analysis of detailed chemical bonding structures is needed to further understand the mechanical properties of low k dielectrics. While this work was performed using a particular CDO formulation, the methodology and considerations are applicable to a range of nano materials. Therefore, these methods and results will prove to be useful to a wide range of industries interested in integrating nano-materials into complex structures.

Published in:

Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI

Date of Conference:

16-18 May 2011