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Scaling of copper seed layer thickness using plasma-enhanced ALD and an optimized precursor

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5 Author(s)
Jiajun Mao ; Coll. of Nanoscale Sci. & Eng., Univ. at Albany-SUNY, Albany, NY, USA ; Eisenbraun, E. ; Omarjee, V. ; Korolev, A.
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A recently developed precursor, AbaCus, has been evaluated for use in ultra-low temperature copper deposition by PEALD. Film adhesion, platability and process window evaluation demonstrate a strong capability of this precursor to overcome current metallization challenges.

Published in:

Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI

Date of Conference:

16-18 May 2011