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Elements of a yield model combining multiple input metrics will be reviewed. This model has been applied to multiple products across 65nm and 45nm SOI technology nodes. It provides long term yield metrics as well as yield diagnostics. Focus will be on the addition of After Develop Inspection (ADI) yield metrics into an existing framework which incorporates high resolution defect scans (PLY) and scribe kerf electrical test data.
Date of Conference: 16-18 May 2011