Referenced Items are not available for this document.
Elements of a yield model combining multiple input metrics will be reviewed. This model has been applied to multiple products across 65nm and 45nm SOI technology nodes. It provides long term yield metrics as well as yield diagnostics. Focus will be on the addition of After Develop Inspection (ADI) yield metrics into an existing framework which incorporates high resolution defect scans (PLY) and scribe kerf electrical test data.
Published in:
Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
Date of Conference: 16-18 May 2011
- Page(s):
- 1 - 4
- ISSN :
- 1078-8743
- E-ISBN :
- 978-1-61284-409-1
- Print ISBN:
- 978-1-61284-408-4
- INSPEC Accession Number:
- 12071535
- Conference Location :
- Saratoga Springs, NY
- Digital Object Identifier :
- 10.1109/ASMC.2011.5898162
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
