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Charge trapping process of nonvolatile memory devices based on CdTe and CdTe–CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites

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5 Author(s)
Yun, Dong Yeol ; Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Republic of Korea ; Son, Jung Min ; Tae Whan Kim ; Kim, Sung Woo
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Nonvolatile memory devices based on CdTe and CdTe–CdSe core-shell nanoparticles embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated to investigate the variation in the carrier transport mechanisms due to a CdSe shell. Capacitance-voltage (C-V) curves for Al/CdTe nanoparticles embedded in PMMA/p-Si and Al/CdTe–CdSe nanoparticles embedded in PMMA/p-Si devices at 300 K showed that the flatband voltage shift of the C-V curve for the device with the CdTe–CdSe nanoparticles was relatively smaller than that for the device with the CdTe nanoparticle. Carrier transport mechanisms of the memory devices are described by using the C-V results, energy band diagrams, and capacitance-time retentions.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 24 )

Date of Publication:

Jun 2011

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