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Tunable capacitors employing BZN/BST thin films for RF applications

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5 Author(s)
Ruguan Li ; State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China ; Jiang, Shuwen ; Gao, Libin ; Luyu Wang
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Tunable parallel-plate capacitors employing Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 (BZN/BST) thin films for RF applications are reported. The intermediate frequency measurements indicate that the BZN/BST-based varactors demonstrate large tunability of 39% at 40 V and high device quality factor of 300 at 1 MHz. The devices maintain quite low leakage current density even under a high applied bias. The quality factor analysis shows that the device quality factor is highly dependent on conductor loss of electrodes at frequencies above 1 MHz. The phase shifter employing BZN/BST-based varactors exhibits lower insertion loss than does employing semiconductor diodes at a designed frequency of 445 MHz, demonstrating the potential of tunable capacitors employing BZN/BST thin films for RF applications.

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Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:58 ,  Issue: 6 )