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Surrogate-Model-Based Analysis of Analog Circuits—Part II: Reliability Analysis

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3 Author(s)
Yelten, M.B. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Franzon, P.D. ; Steer, M.B.

This paper presents a reliability simulation framework based on surrogate modeling. A novel methodology has been developed, which integrates variability analysis with the reliability concepts by employing transistor drain-current surrogate models in terms of crucial process parameters, bias voltages, temperature, and time. Simulation techniques using these models enables exploration of the effects of time-based degradation on analog circuits. The analysis of a differential amplifier at the 65-nm technology node reveals that the dc current is reduced by around 10% in ten years. The tool is used to demonstrate how the biasing structures of analog circuits can be designed to boost aging resilience.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:11 ,  Issue: 3 )

Date of Publication:

Sept. 2011

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