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Evaluation of hFE fluctuation of high-performance IDP emitter transistors by using test structures

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4 Author(s)
Tamaki, Y. ; Device Dev. Center, Hitachi Ltd., Tokyo, Japan ; Hashimoto, T. ; Watanabe, K. ; Shiba, T.

Current gain (hFE) fluctuation of in-situ phosphorus doped polysilicon (IDP) emitter transistors has been analyzed using a new test structure. From the electrical data, it has been revealed that there are some transistors with low hFE at random distribution in a wafer and also in a chip. Further experiments and TEM analysis show the phenomenon is mainly due to the interfacial condition between emitter poly-Si and mono-Si

Published in:

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Date of Conference:

17-20 Mar 1997

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