By Topic

Test structure and methodology for experimental extraction of threshold voltage shifts due to quantum mechanical effects in MOS inversion layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chindalore, G. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Hareland, S. ; Jallepalli, S. ; Fasch, A.F., Jr.
more authors

This paper reports the test structure and methodology that has been developed to experimentally extract the threshold voltage shifts ⟨ΔVT⟩ due to quantum mechanical (QM) effects in both electron and hole MOS inversion layers. Compared to classical calculations, which ignore QM effects, these effects are found to cause a significant increase in the threshold voltage on the order of 100 mV in MOSFET devices fabricated with oxide thicknesses and doping levels anticipated for technologies with gate lengths ⩽0.25 μm. ΔV T has been extracted from experimental devices with doping levels ranging from 5×1015 cm-3 to 1×1018 cm-3, and recently developed theoretical models are found to agree well with the results. Emphasis has been placed on developing a suitable test structure and methodology which enables the extraction of QM effects with little known error

Published in:

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Date of Conference:

17-20 Mar 1997