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GIDL-induced charge injection for characterization of plasma edge damage in CMOS devices

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6 Author(s)
Brozek, T. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Sridharan, A. ; Werking, J. ; Anderson, S.R.
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The oxide thickening at the gate edge during poly gate reoxidation is very sensitive to plasma damage resulting from the poly-Si gate etch. The gate oxide thickening over the drain-gate overlap region can be used as a measure of the plasma edge damage. This paper presents a new method-GIDL-induced localized charge injection-to investigate plasma edge damage in CMOS devices. The sensitivity of the method and correlation with device performance is demonstrated in a study of technological splits with different levels of plasma damage. The method does not require any special test structures other than the regular transistor

Published in:

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Date of Conference:

17-20 Mar 1997

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