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Electrical assessment of planarisation for CMP [inter-layer dielectrics]

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7 Author(s)
Elliott, J.P. ; Dept. of Electr. Eng., Edinburgh Univ., UK ; Fallon, M. ; Walton, A.J. ; Stevenson, J.T.M.
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Experimental measurements of an electrical test structure for use in assessment of the degree of planarisation of inter-layer dielectrics are presented and compared with theoretical predictions. The test structure consists of two sets of metal combs separated by a dielectric. For each structure the combs on the two layers overlap each other by some degree, with adjacent structures having the overlap in one direction progressionally offset by 0.2 μm. It is demonstrated theoretically that the structure is robust to expected levels of oxide thickness variation

Published in:

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Date of Conference:

17-20 Mar 1997