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On wafer noise measurement using bipolar transistor RF test structures

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1 Author(s)
Connor, S.D. ; Bipolar Characterization Group, GEC Plessey Semicond., Oldham, UK

We present here a technique for on wafer noise measurements using bipolar R.F. cell structures. Measurements were taken using both single and multiple device placements on a variety of technologies. At mid band, identification of individual noise sources within the device allows us to extract a base spreading resistance parameter. This noise extracted value for rb is compared to data from `S' parameter measurement and our noise measurements are tested against simulated mid-band noise profiles

Published in:

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Date of Conference:

17-20 Mar 1997

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