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Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates

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6 Author(s)
Huei-Min Huang ; Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Shih-Chun Ling ; Wei-Wen Chan ; Tien-Chang Lu
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A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dependent photoluminescence (PL). Due to the absence of quantum-confined Stark effect, the negligible PL emission peak shift and nearly identical power index for all samples were observed. In contrast to the as-grown MQWs, the thermal activation energy and internal quantum efficiency of NRELOG MQWs exhibit 1.6-fold and 4-fold increases, respectively, which are attributed to the improvement of crystal quality by NRELOG. Furthermore, the Shockley-Read-Hall nonradiative coefficient, determined from the fits of power-dependent PL quantum efficiency, is also apparently reduced while MQWs are grown on NRELOG GaN template. The results show the feasibility to fabricate high radiative efficiency a-plane devices via NRELOG.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 8 )

Date of Publication:

Aug. 2011

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