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3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

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11 Author(s)
Sei-Hyung Ryu ; Cree Inc., Durham, NC, USA ; Lin Cheng ; Dhar, S. ; Capell, C.
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We present our most recent developments in 4H-SiC DMOSFETs. A 4H-SiC DMOSFET with an active area of 0.1 cm2 showed a specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1500 V with gate shorted to source at 25°C. A threshold voltage of 3.5 V was extracted from the DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.5 cm2, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25°C.

Published in:

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Date of Conference:

23-26 May 2011

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