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The development of a new 0.16 μm SOIBCD technology integrating components with breakdown voltage higher than 300 V is here described. Process integration and mechanical stress due to buried oxide and lateral dielectric isolation was investigated with TCAD simulations, morphological analysis and Raman spectroscopy measurements. Component portfolio was derived from existing junction isolated (JI) 0.16 μm technologies and expanded with high voltage MOS. Stress induced by the full dielectric isolation is far from critical values. Breakdown voltages over 350 V were measured.