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A Depletion-Mode In–Ga–Zn–O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level Shifter

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8 Author(s)
Binn Kim ; Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea ; Seung Chan Choi ; Jeong-Soo Lee ; Sun-Jae Kim
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We proposed and fabricated the shift register embedded with a full-swing level shifter employing the depletion-mode In-Ga-Zn-O thin-film transistors (IGZO TFTs). In the level shifter, two clock signals with 180° out of phase and one start signal were employed to obtain a full-swing output. Also, the depletion-mode IGZO TFTs in the shift register were successfully turned off by employing two low-voltage-level signals. The level shifter and the shift register consist of six TFTs and one capacitor, and 11 TFTs, respectively. The depletion-mode IGZO TFT shift register embedded with a level shifter exhibited a high-voltage output pulse without any distortion. The power consumption is 2.13 mW at a VGH of 20 V, a VGL1 of -10 V, and a clock frequency of 12.5 kHz.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 9 )