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A lead zirconate titanate (PZT) microelectromechanical systems (MEMS) digital switch was designed as a low-power low-frequency control system intended to create energy-efficient microcontrollers, control higher voltage systems, and provide integrated control over other MEMS platforms. In addition, the technology is inherently insensitive to high energy radiation and has been shown to operate over a wide range of temperatures. Initial devices were fabricated with three design variables of interest-actuator length, width, and contact metallurgy (Au/Pt, Au/Ru, and Au/Au). To assess the impact of each variable on device performance, device wafers were measured using a SUSS semiautomated probe station and associated control hardware and software. Devices were evaluated based on contact resistance, actuation voltage, minimum actuation voltage using a voltage bias, propagation delay, dynamic power, and static power consumption. The measurements were then analyzed to determine the optimal switch geometry and contact material combination for digital applications. With the data collected, a software model was developed for accurate simulation of higher complexity circuits composed of these switches.