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Boron nitride substrates for high mobility chemical vapor deposited graphene

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6 Author(s)
Gannett, W. ; Department of Physics, University of California, Berkeley, California 94720, USA ; Regan, W. ; Watanabe, K. ; Taniguchi, T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3599708 

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm2/Vs, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 24 )

Date of Publication:

Jun 2011

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