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Design and performance of InAlGaAs/InAlAs superlattice avalanche photodiodes

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5 Author(s)
I. Watanabe ; Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan ; M. Tsuji ; M. Hayashi ; K. Makita
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InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APD's) have been designed and experimentally analyzed. The layer structures and the electric field profiles were designed for 10 Gb/s applications. The mesa-structure SL-APD's exhibited a gain-bandwidth product of 120-150 GHz, a top bandwidth of 15 GHz, and a multiplied dark current of 15-20 nA for a mesa-diameter of 30 μm. Other characteristics, such as temperature dependence of dark current and dynamic ranges, were also analyzed. Furthermore, an estimated life-time of longer than 105 h was achieved for the first time. The obtained characteristics, especially their high-speed characteristics with their low dark current, indicate potential for 2.5-10 Gb/s high-sensitivity and small optical receiver applications

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Journal of Lightwave Technology  (Volume:15 ,  Issue: 6 )