AC-Hall effect in multilayered semiconductors

A new technique is presented which exploits ac-Hall effect in the characterization of layered semiconductor structures. The method involves the use of laser signals by means of optical fibers in the presence of a dc magnetic bias field. Upon incidence the polarization of the optical signal is rotated via a Lorentz force due to the ac-Hall effect. As such, the reflected waves carry informations on the Hall mobility of the charge carriers. The calculations show that ac-Hall reflection coefficient warrants sufficient intensity to be measured. Our theory is complete in the sense that depth profiling has been explicitly incorporated in the formulation.