By Topic

Laser trimming of thick film resistors on aluminum nitride substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kurihara, Y. ; Hitachi Ltd., Ibaraki, Japan ; Takahashi, S. ; Yamada, K. ; Kanai, K.
more authors

Problems, and their countermeasures encountered in laser trimming of thick film resistors on aluminum nitride (AlN) substrates were studied. Trimming was done in air by the selection of a suitable laser power (up to 1 W of YAG laser at the interface between the resistor and AlN). Under these conditions, resistance values could be controlled to within ±1% of their target values. Resistance changes of trimmed resistors were less than ±0.4% after a thermal cycle test (-55 to 150°C, 1000 cycles) and a high temperature storage test (150°C, 1000 h). Under the conditions generally used for trimming of alumina hybrid integrated circuits (YAG, 2 W, in air), resistance control was possible, but the insulation characteristics at the irradiated regions were degraded. When AlN substrates were directly irradiated under these conditions, the surfaces were also damaged. Damaged regions were fully covered with a fluid substance consisting mainly of Al2O3. Insulation degradation was attributed to formation of free Al, along with the Al2O3. However, under irradiation at low power, no insulation degradation was found, because the formation of free Al and Al2O3 was suppressed

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:13 ,  Issue: 3 )