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Correlation between electrical resistance and microstructure in gold wirebonds on aluminum films

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4 Author(s)
Maiocco, L. ; Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA ; Smyers, D. ; Munroe, P.R. ; Baker, Ian

Gold ball bonds attached to either pure Al films or Al films with Cu and Si additions were annealed at temperatures in the range 77-277°C for periods of up to 3000 h. Electrical resistance of the bonds was measured to within ±1 mΩ using a manual four-probe arrangement with an applied current of up to 100 mA. Nonlinear multiple regression analysis of the data produced an empirical model for the resistance increase up to 8 mΩ. The resistance increases are related to the intermetallic phases and void configurations observed

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:13 ,  Issue: 3 )

Date of Publication:

Sep 1990

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