Cart (Loading....) | Create Account
Close category search window

Correlation between electrical resistance and microstructure in gold wirebonds on aluminum films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Maiocco, L. ; Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA ; Smyers, D. ; Munroe, P.R. ; Baker, Ian

Gold ball bonds attached to either pure Al films or Al films with Cu and Si additions were annealed at temperatures in the range 77-277°C for periods of up to 3000 h. Electrical resistance of the bonds was measured to within ±1 mΩ using a manual four-probe arrangement with an applied current of up to 100 mA. Nonlinear multiple regression analysis of the data produced an empirical model for the resistance increase up to 8 mΩ. The resistance increases are related to the intermetallic phases and void configurations observed

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:13 ,  Issue: 3 )

Date of Publication:

Sep 1990

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.