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Photon emission in deep submicrometre N-channel SOI MOSFETs

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3 Author(s)
S. H. Renn ; CNRS, ENSERG, Grenoble, France ; J. L. Pelloie ; F. Balestra

Hot carrier effects are thoroughly investigated in deep submicrometre N-channel SOI MOSFETs using photon emission measurements. The maximal photon number (Nph) is obtained for the lower gate bias in the case of a sufficiently high drain voltage and/or small gate length. For low Vd and/or long channels, Nph is maximum around Vg≃Vd/2. These results are in agreement with those obtained in hot-carrier-induced degradations

Published in:

Electronics Letters  (Volume:33 ,  Issue: 12 )