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High power 630 nm band laser diodes with strain-compensated single quantum well active layer

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6 Author(s)
Hiroyama, R. ; Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan ; Uetani, T. ; Bessho, Y. ; Shone, M.
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High power 630 nm band AlGaInP laser diodes with a strain-compensated single quantum well active layer have been successfully fabricated. The highest output power achieved was 72 mW. High power operation of 30 mW was obtained at up to 75°C; reliable operation was achieved for more than 1000 h under 30 mW at 50°C

Published in:

Electronics Letters  (Volume:33 ,  Issue: 12 )

Date of Publication:

5 Jun 1997

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