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Submilliamp 1.3 μm vertical-cavity surface-emitting lasers with threshold current density of <500A/cm2

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9 Author(s)
Qian, Y. ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY ; Zhu, Z.H. ; Lo, Y.H. ; Huffaker, D.L.
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High performance 1.3 μm vertical-cavity surface-emitting lasers (VCSELs) using oxygen implantation in wafer-bonded GaAs-AlGaAs mirrors are demonstrated. A record low threshold current density of 454 A/cm2 and a threshold current of 0.83 mA have been achieved for pulsed operation at 20°C. The maximum CW and pulsed operating temperatures are 40 and 112°C, respectively

Published in:

Electronics Letters  (Volume:33 ,  Issue: 12 )

Date of Publication:

5 Jun 1997

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