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Ion beam contamination during P+ source/drain ion implantation

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5 Author(s)
Jacobs, C. ; Microelectron. Center, Raytheon Co., Andover, MA, USA ; Karnett, M. ; Shaw, R. ; Pulvirent, L.
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This paper describes the studies performed to determine whether or not a high energy boron contaminant was being introduced during a BF2, P+ source/drain implant and its impact on critical electrical device parameters and sort yields. The study confirmed the presence of a high energy boron contaminant during P+ implant on a medium current ion implanter. The contaminant significantly altered both PMOSFET threshold voltage and sort yield. While control of source vacuum during P+ implant impacted the degree of contaminant present, it could not be effectively eliminated. A manufacturable solution could only be achieved by introducing a beam filter and controlling source vacuum to effectively eliminate the high energy boron contaminant. Modification of the P+ implant conditions to eliminate the high energy contaminant significantly improved DC parametric and wafer sort yields

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI

Date of Conference:

14-16 Nov 1994