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To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated. The dark current density of the photodetectors is about 7 /spl mu/A/cm/sup 2/. Its responsivity at 0.83-/spl mu/m wavelength is about 0.48 A/W. After thermal storage at 150/spl deg/C for 10 h, no performance degradation was found in the novel photodetectors.
Date of Publication: May 1997