Referenced Items are not available for this document.
To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated. The dark current density of the photodetectors is about 7 /spl mu/A/cm/sup 2/. Its responsivity at 0.83-/spl mu/m wavelength is about 0.48 A/W. After thermal storage at 150/spl deg/C for 10 h, no performance degradation was found in the novel photodetectors.
Published in:
Photonics Technology Letters, IEEE
(Volume:9
,
Issue:
5
)
Date of Publication: May 1997
- Page(s):
- 660 - 662
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 5575687
- Digital Object Identifier :
- 10.1109/68.588188
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1997
- Sponsored by :
- IEEE Photonics Society
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