Referenced Items are not available for this document.
We report for the first time top-emitting buried oxide vertical cavity lasers using transparent indium tin oxide electrodes. Our process enables broad-area InAlGaAs VCSELs to be fabricated in a single lithography step, thus allowing the fast turn-around time necessary for evaluating VCSEL epitaxial materials. The ITO contacts attain a peak transmission of 96%, a specific contact resistance of 10/sup -5/ /spl Omega//spl middot/cm/sup 2/, and a sheet resistivity of 2.5/spl times/10/sup -4/ /spl Omega//spl middot/cm. Under room temperature CW pumping, the devices exhibit a minimum threshold current density of 1.2 kA/cm/sup 2/ at a wavelength of 801 mm, and have a maximum light output power of 5.2 mW.
Published in:
Photonics Technology Letters, IEEE
(Volume:9
,
Issue:
5
)
Date of Publication: May 1997
- Page(s):
- 551 - 553
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 5575650
- Digital Object Identifier :
- 10.1109/68.588090
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1997
- Sponsored by :
- IEEE Photonics Society
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