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A GaN Schottky diode using Zr/Al/Mo/Au metal stack for Schottky contact has been newly developed. Turn-on (Von) and breakdown voltages (Vbr) are controllable with varying the annealing temperature. The fabricated diode shows the values Von, series resistance (Rs), capacitance (C0), and Vbr to be 0.42 V, 4.2 Ω, 1.0 pF, and 24 V, respectively. These values indicate that 85% conversion efficiency is expected at 5.8 GHz in the rectenna circuit.