By Topic

Polymer Cleaning From Porous Low- k Dielectrics in \hbox {He/H}_{2} Plasmas

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Shoeb, Juline ; Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA ; Kushner, M.J.

Porous dielectrics such as SiCOH are used as the insulator in interconnect wiring in microelectronics devices to lower the dielectric constant and therefore decrease the resistive-capacitive delay. After etching a trench in low-k; di electrics in fluorocarbon plasmas, a CFx polymer remains on the sidewalls, which must be removed in a manner that does not damage the low-k material. This can be accomplished using He/H2 plasmas, which produce hot H atoms (i.e., energy >; 1 eV). We present images of the distributions of hot H atoms and H+ ions from an inductively coupled plasma and their resulting cleaning of a trench etched in SiCOH.

Published in:

Plasma Science, IEEE Transactions on  (Volume:39 ,  Issue: 11 )