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Porous dielectrics such as SiCOH are used as the insulator in interconnect wiring in microelectronics devices to lower the dielectric constant and therefore decrease the resistive-capacitive delay. After etching a trench in low-k; di electrics in fluorocarbon plasmas, a CFx polymer remains on the sidewalls, which must be removed in a manner that does not damage the low-k material. This can be accomplished using He/H2 plasmas, which produce hot H atoms (i.e., energy >; 1 eV). We present images of the distributions of hot H atoms and H+ ions from an inductively coupled plasma and their resulting cleaning of a trench etched in SiCOH.