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Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system

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5 Author(s)
Jiang, Chongyun ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People''s Republic of China ; Chen, Yonghai ; Ma, Hui ; Yu, Jinling
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In this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C2v symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin–orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 23 )

Date of Publication:

Jun 2011

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