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Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

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16 Author(s)
Laukkanen, P. ; Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland and Turku University Centre for Materials and Surfaces (MatSurf), Turku, Finland ; Punkkinen, M.P.J. ; Lang, J. ; Tuominen, M.
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Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 23 )