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Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy

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11 Author(s)
J. J. Nowak ; IBM-MagIC MRAM Alliance, IBM T. J. Watson Research Center, Yorktown Heights, NY, USA ; R. P. Robertazzi ; J. Z. Sun ; G. Hu
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Bit error rates below 10-11 are reported for a 4-kb magnetic random access memory chip, which utilizes spin transfer torque writing on magnetic tunnel junctions with perpendicular magnetic anisotropy. Tests were performed at wafer level, and error-free operation was achieved with 10 ns write pulses for all nondefective bits during a 66-h test. Yield in the 4-kb array was limited to 99% by the presence of defective cells. Test results for both a 4-kb array and individual devices are consistent and predict practically error-free operation at room temperature.

Published in:

IEEE Magnetics Letters  (Volume:2 )